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| GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 487 P Area not flat 0.7 0.8 0.4 0.4 0.6 0.4 3.1 2.5 2.0 1.7 4.0 3.6 2.54 mm spacing o3.1 o2.9 1.8 1.2 29 27 4.5 4.0 Cathode 3.5 Chip position 0.6 0.4 Approx. weight 0.3 g Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlassigkeit q Enge Toleranz: Chipoberflache/ Bauteiloberkante q Hohe Impulsbelastbarkeit q Gute spektrale Anpassung an Si-Fotoempfanger q Sehr plane Oberflache q Gehausegleich mit SFH 309 Anwendungen q Lichtschranken fur Gleich- und Features q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Small tolerance: Chip surface to case surface q High pulse handling capability q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 309 Applications q Photointerrupters q Fibre optic transmission Wechsellichtbetrieb bis 500 kHz q LWL Typ Type SFH 487 P Bestellnummer Ordering Code Q62703-Q517 Gehause Package 3-mm-LED-Gehause, plan, klares violettes EpoxyGieharz, Anschlusse im 2.54-mm-Raster (1/10''), Anodenkennzeichnung: kurzerer Anschlu 3 mm LED package (T 1), plane, violet-colored transparent epoxy resin, solder tabs lead spacing 2.54 mm (1/10''), anode marking: short lead Semiconductor Group 1 1997-11-01 fex06308 GEX06308 SFH 487 P Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, 10 s Surge current Verlustleistung Power dissipation Warmewiderstand, freie Beinchenlange max. 10 mm Thermal resistance, lead length between package bottom and PC-board max. 10 mm Symbol Symbol Wert Value - 55 ... + 100 100 5 100 2.5 200 375 Einheit Unit C C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot RthJA Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50 % von Imax, Symbol Symbol peak Wert Value 880 Einheit Unit nm 80 nm IF = 100 mA Spectral bandwidth at 50 % of Imax Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area 65 0.16 0.4 x 0.4 Grad deg. mm2 mm A LxB LxW Semiconductor Group 2 1997-11-01 SFH 487 P Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Abstand Chipoberflache bis Gehausevorderseite Distance chip front to case surface Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient or Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von peak, IF = 100 mA Temperature coefficient of peak, IF = 100 mA Symbol Symbol Wert Value 0.4 ... 0.8 Einheit Unit mm H tr, tf 0.6/0.5 s Co 25 pF VF IR 1.5 (< 1.8) 3.0 (< 3.8) 0.01 ( 1) V A e 25 mW TCI - 0.5 %/K TCV TC -2 0.25 mV/K nm/K Semiconductor Group 3 1997-11-01 SFH 487 P Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Wert Value Einheit Unit Ie >2 mW/sr Ie typ. 30 mW/sr Radiation characteristics Irel = f () 40 30 20 10 0 1.0 OHR01894 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-01 SFH 487 P Relative spectral emission Irel = f () 100 rel % 80 OHR00877 Radiant intensity Ie = f (IF) Ie 100 mA OHR00878 Single pulse, tp = 20 s 10 2 e (100mA) 10 1 e Max. permissible forward current IF = f (TA) 125 OHR00880 F mA 100 60 10 0 75 40 10 -1 50 20 10 -2 25 0 750 10 -3 800 850 900 950 nm 1000 10 0 10 1 10 2 10 3 mA 10 4 F 0 0 20 40 60 80 C 100 T Forward current, IF = f (VF) Single pulse, tp = 20 s 10 1 OHR00881 Permissible pulse handling capability IF = f (), TA = 25 oC, duty cycle D = parameter 10 4 mA OHR00886 Forward current versus lead length between the package bottom and the PC-board IF = f (I), TA = 25 oC 120 mA OHR00949 F A F 10 0 10 3 0.1 0.2 D = 0.005 0.01 0.02 0.05 F 100 80 10 -1 0.5 10 2 DC 60 40 10 -2 D= 10 -3 tp T tp F 20 0 1 2 3 4 5 6 V VF 8 T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 0 10 1 s 10 2 tp 0 5 10 15 20 25 mm 30 Semiconductor Group 5 1997-11-01 |
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